2N7000

The 2N7000 is a N-channel, enhancement-mode MOSFET used for small-signal switching applications.

Packaged in a TO92 enclosure, the 2N7000 is a 60 volt device capable of switching in the 200-350 milliamp range with an on-resistance of 0.3-5 ohms.

The main use of the 2N7000 is as a switch for low voltages and currents. In switching circuits, the 2N7000 can be used much like an NPN Transistor, but has advantages:

• low threshold voltage means no gate bias required
• high input impedance of the insulated gate means almost no gate current is required
• consequently no current-limiting resistor is required in the gate input

The main disadvantages of the 2N7000 over a bipolar transistor in switching are the following:

• susceptibility to cumulative damage from static discharge prior to installation
• circuits with external gate exposure require a protection gate resistor or other static discharge protection
• Non-zero ohmic response when driven to saturation, as compared to a constant junction voltage drop in a bipolar junction transistor

The circuit symbol for the 2N7000 generally does not show the internal Diode formed by the substrate connection source to drain.

External links

• Datasheet for On Semiconductor's 2N7000 (PDF)
• 2n7000 Photo
• Application Notes for Experimenters
• E-Field Sensor demonstrates extremely high gate impedance with a simple LED circuit
• Driving a single MOSFET Detailed description of usage of a similar MOSFET

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